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For the Inventor, By the Inventor

Katonah, NY, United States of America

John Casimir Slonczewski

This inventor holds 25 USPTO granted patents and 1 published patent application, primarily in Magnetic Memory Devices. Top assignees: International Business Machines Corporation, Infineon Technologies Ag, Other. Active years: 1977-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John Casimir Slonczewski. Retrieved from https://idiyas.com/inventor/john-casimir-slonczewski

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 72.0

Average Co-Inventor Count = 2.9

ph-index = 12

Forward Citations = 1,025(Granted Patents)


Company Filing History:

goldMedal23 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal1 out of 15,027 
 
Infineon Technologies Ag
 patents
bronzeMedal2 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1977-2014

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Areas of Expertise:
Spin-Current
Magnetic Memory
Spin-Transfer Torque
Magnetoresistive Sensor
Magnetic Tunnel Junctions
Magnetic Components
Thin Film Structures
Gradientless Propulsion
Atomic Force Microscope
Magnetic Devices
Lattice Arrays
Electrical Interaction
25 patents (USPTO):Explore Patents
1. 8860105 - Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element (2014-10-14),
2. 8558332 - Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element (2013-10-15),
3. 8467235 - Creating spin-transfer torque in oscillators and memories (2013-06-18),
4. 8064246 - Creating spin-transfer torque in oscillators and memories (2011-11-22),
5. 7943399 - Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element (2011-05-17),
6. 7602000 - Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element (2009-10-13),
7. 7170173 - Magnetically lined conductors (2007-01-30),
8. 6914761 - Magnetoresistive sensor with magnetic flux paths surrounding non-magnetic regions of ferromagnetic material layer (2005-07-05),
9. 6775109 - Magnetoresistive sensor with magnetostatic coupling of magnetic regions (2004-08-10),
10. 6590750 - Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices (2003-07-08),
11. 6538919 - Magnetic tunnel junctions using ferrimagnetic materials (2003-03-25),
12. 6510031 - Magnetoresistive sensor with magnetostatic coupling to obtain opposite alignment of magnetic regions (2003-01-21),
13. 6452764 - Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices (2002-09-17),
14. 5841692 - Magnetic tunnel junction device with antiferromagnetically coupled (1998-11-24),
15. 5695864 - Electronic device using magnetic components (1997-12-09),

Title: Innovator Spotlight: John Casimir Slonczewski

Introduction:

John Casimir Slonczewski is a prolific inventor hailing from Katonah, NY, United States. With an impressive portfolio of 25 patents, he has made significant contributions to the field of spin-current switched magnetic memory elements.

Latest Patents:

Among his latest patents is the "Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element." This invention involves a memory element comprising magnetic layers with perpendicular magnetic anisotropy and a current-switchable magnetic moment, along with barrier layers to facilitate circuit integration.

Career Highlights:

John has demonstrated expertise in fabricating spin-current switched magnetic memory elements. His innovation lies in the in-situ formation of interfaces between various layers, the lithographic definition of pillar structures, and the creation of top electrodes on these structures. His work has paved the way for advancements in memory technology.

Collaborations:

Throughout his career, John has collaborated with esteemed professionals in the industry. Notable colleagues include Jonathan Zanhong Sun and Bernell E Argyle, who have worked alongside him at International Business Machines Corporation (IBM) and other leading organizations.

Conclusion:

In conclusion, John Casimir Slonczewski's dedication to innovation and his remarkable patent portfolio underscore his influence in the realm of magnetic memory elements. His collaborations and career achievements have solidified his reputation as a trailblazer in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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