The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Mar. 04, 2011
Jonathan Zanhong Sun, Shrub Oak, NY (US);
Rolf Allenspach, Adliswil, CH;
Stuart Stephen Papworth Parkin, San Jose, CA (US);
John Casimir Slonczewski, Katonah, NY (US);
Bruce David Terris, Sunnyvale, CA (US);
Jonathan Zanhong Sun, Shrub Oak, NY (US);
Rolf Allenspach, Adliswil, CH;
Stuart Stephen Papworth Parkin, San Jose, CA (US);
John Casimir Slonczewski, Katonah, NY (US);
Bruce David Terris, Sunnyvale, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.