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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8860105 B1

PDFFull Text
Date of Patent:
Oct. 14, 2014

Filed:

Sep. 04, 2013

Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jonathan Zanhong Sun, Shrub Oak, NY (US);

Rolf Allenspach, Adliswil, CH;

Stuart Stephen Papworth Parkin, San Jose, CA (US);

John Casimir Slonczewski, Katonah, NY (US);

Bruce David Terris, Sunnyvale, CA (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Daniel P. Morris

McGinn IP Law Group, PLLC

Primary Examiner:

Thinh T Nguyen

Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); B82Y 25/00 (2011.01); G11C 11/16 (2006.01); H01F 41/30 (2006.01); H01F 10/32 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01F 41/308 (2013.01); H01F 10/3263 (2013.01); H01L 43/08 (2013.01); H01L 27/222 (2013.01); H01L 43/12 (2013.01); H01F 10/3254 (2013.01); B82Y 25/00 (2013.01); G11C 11/16 (2013.01);
Abstract

A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer.

Find Patent Forward Citations

Sun, Jonathan. (2014). Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element (U.S. Patent No. 8860105). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8860105

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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