The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2011

Filed:

Aug. 27, 2009
Applicants:

Jonathan Zanhong Sun, Shrub Oak, NY (US);

Rolf Allenspach, Adliswil, CH;

Stuart Stephen Papworth Parkin, San Jose, CA (US);

John Casimir Slonczewski, Katonah, NY (US);

Bruce David Terris, Sunnyvale, CA (US);

Inventors:

Jonathan Zanhong Sun, Shrub Oak, NY (US);

Rolf Allenspach, Adliswil, CH;

Stuart Stephen Papworth Parkin, San Jose, CA (US);

John Casimir Slonczewski, Katonah, NY (US);

Bruce David Terris, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.


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