Ossining, NY, United States of America

John A Baumann

This inventor holds 15 USPTO granted patents, primarily in Pnictide Materials. Top assignees: Stauffer Chemical Company, American Cyanamid Company. Active years: 1985-1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John A Baumann. Retrieved from https://idiyas.com/inventor/john-a-baumann-2d6kwtx3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 5

Forward Citations = 86(Granted Patents)


Location History:

  • Dobbs Ferry, NY (US) (1985 - 1991)
  • Ossining, NY (US) (1986 - 1993)

Company Filing History:


Years Active: 1985-1993

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Areas of Expertise:
Pnictide
Catenated Phosphorus
Vacuum Systems
Polyphosphide
Evaporated Films
Doping
Crystalline Growth
Gas Generators
Insulating Devices
Phase Traps
Preparation Methods
Process Gas Components
15 patents (USPTO):Explore Patents

Title: Innovations of John A Baumann

Introduction

John A Baumann is a notable inventor based in Ossining, NY (US), recognized for his significant contributions to the field of semiconductor technology. With a total of 15 patents to his name, Baumann has made remarkable advancements in the passivation and insulation of III-V devices using pnictides.

Latest Patents

Baumann's latest patents focus on the development of pnictide thin films, particularly phosphorus, which are grown on III-V semiconductors such as InP, GaP, and GaAs. These films exhibit a novel layer-like, puckered sheet-like local order and are typically 400 Angstroms thick. They are preferably grown by molecular beam deposition, although other methods like vacuum evaporation, sputtering, and chemical vapor deposition can also be utilized. The pnictide layers significantly reduce the density of surface states, allowing for modulation of the depletion layer, reduction of the surface barrier, and enhancement of electron concentration at the surface. This innovation leads to decreased surface recombination velocity and increased photoluminescence intensity. The applications of these layers extend to various devices, including MISFETs, MESFETs, and opto-electronic devices such as light-emitting diodes and solar cells.

Career Highlights

Throughout his career, Baumann has worked with prominent companies, including Stauffer Chemical Company and American Cyanamid Company. His work has been pivotal in advancing semiconductor technology and enhancing the performance of electronic devices.

Collaborations

Baumann has collaborated with notable individuals in his field, including Rozalie Schachter and Christian G Michel. Their combined expertise has contributed to the successful development of innovative semiconductor materials and applications.

Conclusion

John A Baumann's contributions to semiconductor technology through his innovative patents and collaborations have significantly impacted the field. His work continues to influence advancements in electronic devices and materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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