Joerg Horzel

Title: Joerg Horzel: Innovator in Semiconductor Technology

Introduction

Joerg Horzel is a notable inventor based in Heverlee, Belgium. He has made significant contributions to the field of semiconductor technology, particularly in the area of dopant profiles. With a total of two patents to his name, Horzel's work has advanced the understanding and application of semiconductor components.

Latest Patents

Horzel's latest patents include a method for producing a dopant profile and a method for forming a dopant profile. The first patent outlines a process that begins at the surface of a wafer-shaped semiconductor component, where dopant atoms are introduced. This method produces a provisional first dopant profile, followed by a heat treatment of stacked semiconductor components to create a second dopant profile with greater depth. The second patent focuses on forming a dopant profile using phosphorus as a dopant. It details the steps of applying a phosphorus dopant source, forming a first dopant profile, and subsequently removing the dopant source to create a deeper second dopant profile.

Career Highlights

Throughout his career, Joerg Horzel has worked with prominent organizations such as Schott Solar AG and Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung e.V. His experience in these companies has allowed him to refine his expertise in semiconductor technology and contribute to innovative solutions in the field.

Collaborations

Horzel has collaborated with notable colleagues, including Gabriele Blendin and Dieter Franke. These partnerships have likely enriched his work and fostered advancements in semiconductor research.

Conclusion

Joerg Horzel's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a key figure in the field. His work continues to influence the development of advanced semiconductor components.