The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Dec. 03, 2009
Joerg Horzel, Heverlee, BE;
Dieter Franke, Bl Vaals, NL;
Gabriele Blendin, Linsengericht, DE;
Marco Faber, Mainz, DE;
Wilfried Schmidt, Schwaigern, DE;
Joerg Horzel, Heverlee, BE;
Dieter Franke, Bl Vaals, NL;
Gabriele Blendin, Linsengericht, DE;
Marco Faber, Mainz, DE;
Wilfried Schmidt, Schwaigern, DE;
SCHOTT SOLAR AG, Mainz, DE;
Abstract
A method for producing a dopant profile is provided. The method includes starting from a surface of a wafer-shaped semiconductor component by introducing dopant atoms into the semiconductor component. The dopant-containing layer is produced on or in a region of the surface in order to produce a provisional first dopant profile and then a plurality of semiconductor components having a corresponding layer is subjected to heat treatment on top of one another in the form of a stack in order to produce a second dopant profile having a greater depth in comparison to the first dopant profile.