Gabriele Blendin

Title: Gabriele Blendin: Innovator in Semiconductor Technology

Introduction

Gabriele Blendin is a notable inventor based in Linsengericht, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the area of dopant profiling. With a total of two patents to his name, Blendin's work has advanced the methods used in semiconductor manufacturing.

Latest Patents

Gabriele Blendin's latest patents include a "Method for producing a dopant profile" and a "Method for forming a dopant profile." The first patent describes a technique that begins at the surface of a wafer-shaped semiconductor component, where dopant atoms are introduced. This process creates a provisional first dopant profile, followed by a heat treatment of stacked semiconductor components to achieve a deeper second dopant profile. The second patent focuses on forming a dopant profile using phosphorus as a dopant. It outlines steps for applying a phosphorus dopant source, creating a first dopant profile, and subsequently forming a second profile with greater depth after removing the dopant source.

Career Highlights

Gabriele Blendin is currently employed at Schott Solar AG, where he continues to innovate in semiconductor technologies. His expertise in dopant profiling has positioned him as a key figure in the development of advanced semiconductor components.

Collaborations

Throughout his career, Blendin has collaborated with notable colleagues such as Joerg Horzel and Dieter Franke. These partnerships have contributed to the successful development of his patented methods and have fostered a collaborative environment for innovation.

Conclusion

Gabriele Blendin's contributions to semiconductor technology through his innovative patents demonstrate his commitment to advancing the field. His work continues to influence the methods used in semiconductor manufacturing, showcasing the importance of innovation in technology.