The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Aug. 30, 2011
Gabriele Blendin, Gelnhausen, DE;
Joerg Horzel, Freiburg, DE;
Agata Lachowicz, Karlstein, DE;
Berthold Schum, Beibergemuend, DE;
Gabriele Blendin, Gelnhausen, DE;
Joerg Horzel, Freiburg, DE;
Agata Lachowicz, Karlstein, DE;
Berthold Schum, Beibergemuend, DE;
Schott Solar AG, Mainz, DE;
Abstract
A method is provided for forming a dopant profile based on a surface of a wafer-like semiconductor component with phosphorus as a dopant. The method includes the steps of applying a phosphorus dopant source onto the surface, forming a first dopant profile with the dopant source that is present on the surface, removing the dopant source, and forming a second dopant profile that has a greater depth in comparison to the first dopant profile. In order to form an optimized dopant profile, the dopant source is removed after forming the first dopant profile, and precipitates that are crystallized selectively on or in the surface from the precipitates SiPand SiPOare removed.