Mainz, Germany

Joachim Scheerer

This inventor holds 3 USPTO granted patents and 1 EPO patent. Top assignees: Prema-Semiconductor Gmbh, Prema Pr Azisionselektronik Gmbh. Active years: 1996-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Joachim Scheerer. Retrieved from https://idiyas.com/inventor/joachim-scheerer-6j1e56rz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 66.7

 

Average Co-Inventor Count = 2.9

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1996-2009

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3 patents (USPTO):Explore Patents

Title: Joachim Scheerer: Innovator in Semiconductor Technology

Introduction

Joachim Scheerer is a notable inventor based in Mainz, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of bipolar transistors and PMOSFET structures. With a total of 3 patents to his name, Scheerer's work has had a lasting impact on the industry.

Latest Patents

One of Scheerer's latest patents is focused on a bipolar transistor and the method for its production. This invention relates to NPN and PNP bipolar transistors characterized by a particularly high collector-emitter and collector-base blocking voltage. The blocking voltage is enhanced through a specific doping profile. The NPN bipolar transistor consists of a p-doped substrate, a trenched n-doped layer forming the collector, and a p-doped layer arranged above the trenched n-doped layer, which includes an emitter. The design allows for the expansion of spatial charge areas under increasing potential, ensuring high performance and reliability.

Another significant patent involves a method for fabricating a voltage-stable PMOSFET semiconductor structure. This method enables the creation of integrable PMOSFET structures in a P-doped substrate, distinguished by high dielectric strength. The process includes applying a mask to define a window on the semiconductor substrate, followed by high-voltage ion implantation to produce an N-doped well. This innovative approach results in a PMOSFET structure with enhanced dielectric strength due to the weak basic doping of the substrate.

Career Highlights

Throughout his career, Scheerer has worked with several companies, including Prema Semiconductor GmbH and Prema Präzisionselektronik GmbH. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Some of his notable coworkers include Hartmut Grützediek and Wolfgang Winkler. Their collaboration has likely fostered an environment of innovation and creativity in their respective projects.

Conclusion

Joachim Scheerer is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the field. His patents reflect a deep understanding of electronic components and their applications. His contributions continue to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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