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For the Inventor, By the Inventor

Kawasaki, Japan

Jiro Ohshima

This inventor holds 17 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: Kabushiki Kaisha Toshiba, Tokyo Shibaura Denki Kabushiki Kaisha, Kabushiki Kaisha. Active years: 1982-1995.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jiro Ohshima. Retrieved from https://idiyas.com/inventor/jiro-ohshima

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 9

Forward Citations = 321(Granted Patents)


Location History:

  • Yokohama, JP (1982 - 1989)
  • Kawasaki, JP (1985 - 1989)
  • Kitakyushu, JP (1990 - 1995)

Company Filing History:

goldMedal8 out of 53,332 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal7 out of 2,916 
 
Tokyo Shibaura Denki Kabushiki Kaisha
 patents
bronzeMedal1 out of 26 
 
Kabushiki Kaisha
 patents
4. 1 out of 3 
 
Toshiba Shibaura Denki Kabushiki Kaisha
 patents

Years Active: 1982-1995

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Areas of Expertise:
Polycrystalline Silicon
Bipolar Transistor
Self-Aligned Technology
Semiconductor Device
Insulating Layer
Conductive Trench
Epitaxially Regrown
High-Breakdown Voltage
Ion Implantation
Differential Etching
Wiring Material
Isolation Formation
17 patents (USPTO):Explore Patents
1. 5382549 - Method of manufacturing polycrystalline silicon having columnar (1995-01-17),
2. 5102826 - Method of manufacturing a semiconductor device having a silicide layer (1992-04-07),
3. 4975381 - Method of manufacturing super self-alignment technology bipolar (1990-12-04),
4. 4871685 - Method of manufacturing bipolar transistor with self-aligned external (1989-10-03),
5. 4853760 - Semiconductor device having insulating layer including polyimide film (1989-08-01),
6. 4853342 - Method of manufacturing semiconductor integrated circuit device having (1989-08-01),
7. 4780426 - Method for manufacturing high-breakdown voltage semiconductor device (1988-10-25),
8. 4766086 - Method of gettering a semiconductor device and forming an isolation (1988-08-23),
9. 4717682 - Method of manufacturing a semiconductor device with conductive trench (1988-01-05),
10. 4543707 - Method of forming through holes by differential etching of stacked (1985-10-01),
11. 4515642 - Method of forming deep aluminum doped silicon by implanting Al and Si (1985-05-07),
12. 4502207 - Wiring material for semiconductor device and method for forming wiring (1985-03-05),
13. 4479830 - Method of manufacturing a semiconductor device using epitaxially regrown (1984-10-30),
14. 4426234 - Method of forming reproducible impurity zone of gallium or aluminum in a (1984-01-17),
15. 4415372 - Method of making transistors by ion implantations, electron beam (1983-11-15),

Title: Jiro Ohshima: Innovator in Semiconductor Technology

Introduction

Jiro Ohshima is a prominent inventor based in Kawasaki, Japan, known for his significant contributions to semiconductor technology. With a total of 17 patents to his name, he has made remarkable advancements in the manufacturing processes of semiconductor devices.

Latest Patents

Ohshima's latest patents include a method of manufacturing polycrystalline silicon that features a columnar crystalline orientation. This innovation ensures that the polysilicon resistor or electrode formed has a high uniformity of resistance value due to minimal variation in grain size during heat treatment. Additionally, he developed a method for manufacturing a semiconductor device with a silicide layer, which involves forming an insulation film on a silicon substrate and implanting impurities to enhance conductivity. These patents reflect his expertise in creating efficient and reliable semiconductor components.

Career Highlights

Throughout his career, Jiro Ohshima has worked with notable companies such as Kabushiki Kaisha Toshiba and Tokyo Shibaura Denki Kabushiki Kaisha. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the semiconductor field.

Collaborations

Ohshima has collaborated with esteemed colleagues, including Yutaka Koshino and Shin-ichi Taka. These partnerships have further enriched his work and led to innovative solutions in semiconductor manufacturing.

Conclusion

Jiro Ohshima's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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