The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1988
Filed:
Mar. 02, 1987
Jiro Ohshima, Kawasaki, JP;
Shin-ichi Taka, Kawasaki, JP;
Toshiyo Ito, Yokohama, JP;
Masaharu Aoyama, Fujisawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a method of manufacturing a semiconductor device according to the present invention, a given position of a thermal oxide film formed on a monocrystalline silicon layer is opened to expose a surface of the monocrystalline silicon layer to serve as a getter site, a polycrystalline silicon layer is deposited on the thermal oxide film and the surface of the monocrystalline silicon layer, and the polycrystalline silicon layer is oxidized to convert the surface of the monocrystalline silicon layer directly contacting the polycrystalline silicon layer into an oxide film by thermal oxidation. That is, the position of interface between the oxide film and the monocrystalline silicon layer is shifted into the original monocrystalline silicon layer. During thermal oxidation of the polycrystalline silicon layer, a plurality of crystal defects to serve as getter sites are generated deeper than those generated by a conventional implagetter method in the monocrystalline silicon layer. In addition, the crystal defects generated in the manner described above do not extend to the surrounding region by subsequent annealing so that a region of the crystal defects is limited.