The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 1985
Filed:
Jun. 29, 1984
Applicant:
Inventors:
Toshiyo Ito, Yokohama, JP;
Jiro Ohshima, Kawasaki, JP;
Assignee:
Kabushiki Kaisha, , JP;
Primary Examiner:
Int. Cl.
CPC ...
H07L / ; B44C / ;
U.S. Cl.
CPC ...
29578 ; 2957 / ; 148-15 ; 148187 ; 148D / ; 156653 ; 357 54 ;
Abstract
A process of manufacturing a semiconductor device by which a through hole such as contact hole with an obtuse opening edge can be formed in an insulation or passivation layer. At least two silicon oxynitride layers in which the nitrogen to oxygen ratio differs from each other are formed on a semiconductor substrate. The etching rate of the top layer is greater than that of the second layer from the top. The stacked silicon oxynitride layers are then selectively etched to form a through hole with an obtuse opening edge.