The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1995
Filed:
Jul. 02, 1993
Jiro Ohshima, Kitakyushu, JP;
Toshiyo Motozima, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a semiconductor device, the polysilicon resistor or electrode formed of a polysilicon film has a columnar crystalline orientation vertical to the surface of the semiconductor substrate. Thus, the variation in grain size due to the subsequent heat treatment is small, and therefore, the polysilicon resistor or electrode has a high uniformity of resistance value. In addition, since the polysilicon film is formed in the groove in the insulating film formed on the semiconductor substrate, a polysilicon pattern surface which is flush with the surface of the insulating film can be obtained. Thus, unevenness does not occur on the surface of a passivation CVD film coated in the subsequent step, and metal wires formed thereon are not cut.