Milpitas, CA, United States of America

Jin Liu

This inventor holds 25 USPTO granted patents and 1 published patent application and 4 EPO patents, primarily in Three-Dimensional Memory. Top assignees: Sandisk Technologies Inc., Meta Platforms, Inc.. Active years: 2016-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin Liu. Retrieved from https://idiyas.com/inventor/jin-liu-661zt4wj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 96.0

 

Average Co-Inventor Count = 4.8

ph-index = 15

Forward Citations = 767(Granted Patents)


Location History:

  • San Jose, CA (US) (2019)
  • Milpitas, CA (US) (2017 - 2020)
  • Fremont, CA (US) (2016 - 2024)

Company Filing History:


Years Active: 2016-2024

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Areas of Expertise:
Three-Dimensional NAND
Non-Volatile Memory
Memory Device Fabrication
Memory Stack Structure
Dielectric Spacers
Select Gate Transistor
Self-Aligned Electrodes
Mechanical Support
Support Pillar Structures
Vertical NAND
Multi-Tier Memory
Through-Memory-Level Via
25 patents (USPTO):Explore Patents

Title: The Innovative Journey of Jin Liu: A Leader in Memory Device Technology

Introduction

Jin Liu, based in Milpitas, CA, is a prominent inventor with a remarkable portfolio of 23 patents that showcase his expertise in memory device technology. His work has significantly impacted the field, pushing the boundaries of innovation in non-volatile memory systems.

Latest Patents

Among Jin Liu's latest contributions to technology are two groundbreaking patents. The first is titled "Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same." This patent details the formation of an annular dielectric spacer at a joint-level dielectric material layer, enhancing the reliability of memory openings formed through alternating stacks of insulating and spacer material layers. This ingenious design protects the underlying portions of the memory film during the anisotropic etch, paving the way for improved memory device fabrication.

The second notable patent is "Programming selection devices in non-volatile memory strings." This innovation covers the inclusion of multiple selection devices in non-volatile memory strings, enabling precise coupling of memory cell devices to a bit line. By employing different programming operations, this patent optimizes the control circuit's functionality by allowing it to set varying threshold voltages for selection devices, enhancing overall efficiency in memory device performance.

Career Highlights

Jin Liu has held significant positions at leading technology firms, including SanDisk Technologies Inc. and Facebook, Inc. During his tenure, he has consistently contributed to the development of advanced memory technologies, showcasing his passion and dedication to the field of innovation. His extensive experience has solidified his reputation as a thought leader in memory device engineering.

Collaborations

Throughout his career, Jin has had the privilege of collaborating with notable individuals such as Johann Alsmeier and Yanli Zhang. These partnerships have fostered an environment of creativity and knowledge exchange, further enhancing the innovative endeavors they have pursued in the field of technology.

Conclusion

Jin Liu's commitment to innovation in memory device technology is evident in his impressive patent portfolio and collaborative efforts with industry leaders. As he continues to push the envelope in this dynamic field, his work will undoubtedly inspire future developments that will shape the future of memory storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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