Gyeongju, South Korea

Jin Hyun Park

This inventor holds 2 USPTO granted patents. Top assignees: Samsung Display Co., Ltd., Kobe Steel, Ltd.. Active years: 2015-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin Hyun Park. Retrieved from https://idiyas.com/inventor/jin-hyun-park-za3u7yp4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 9.9

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Gyeongju-si, KR (2015)
  • Yongin, KR (2016)

Company Filing History:


Years Active: 2015-2016

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2 patents (USPTO):Explore Patents

Title: Jin Hyun Park: Innovator in Semiconductor Technology

Introduction

Jin Hyun Park is a notable inventor based in Gyeongju-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of thin film transistors and display devices. With a total of 2 patents to his name, Park's work has garnered attention in the industry.

Latest Patents

One of his latest patents is for a thin film transistor and display device. This invention features an oxide semiconductor thin film layer that maintains a stable threshold voltage under various conditions, such as light exposure and bias stress. The design includes a gate electrode, an oxide semiconductor layer used as a channel, an etch stopper layer, a source-drain electrode, and a gate insulator layer. The metal elements in the oxide semiconductor layer consist of indium (In), zinc (Zn), and tin (Sn). Additionally, the hydrogen concentration in the gate insulator layer is controlled to 4 atomic % or lower, enhancing the device's performance.

Another significant patent by Park is for a semiconductor device and method for forming the same. This invention comprises a substrate, a semiconductor layer with an oxide semiconductor, a barrier layer, and an insulating layer. The barrier layer is designed with materials that have lower standard electrode potential, lower electron affinity, or larger band gaps than the oxide semiconductor material. The insulating layer can include silicon-based oxides or nitrides, ensuring effective functionality.

Career Highlights

Jin Hyun Park has worked with prominent companies in the technology sector, including Samsung Display Co., Ltd. and Kobe Steel, Ltd. His experience in these organizations has contributed to his expertise in semiconductor innovations.

Collaborations

Throughout his career, Park has collaborated with talented individuals such as Byung Du Ahn and Gun Hee Kim. These partnerships have likely played a role in advancing his research and development efforts.

Conclusion

Jin Hyun Park is a distinguished inventor whose work in semiconductor technology has led to innovative patents that enhance the performance of electronic devices. His contributions continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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