The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Aug. 30, 2013
Kobe Steel, Ltd., Kobe-shi, JP;
Samsung Display Co., Ltd., Yongin, KR;
Aya Miki, Kobe, JP;
Shinya Morita, Kobe, JP;
Hiroshi Goto, Kobe, JP;
Hiroaki Tao, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Byung Du Ahn, Hwaseong, KR;
Gun Hee Kim, Asan, KR;
Jin Hyun Park, Yongin, KR;
Yeon Hong Kim, Hwaseong, KR;
KOBE STEEL, LTD., Kobe-shi, JP;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.