Samsung Display Co., Ltd.

Kobe Steel, Ltd.

Jin Hyun Park

Gun Hee Kim

Byung Du Ahn

Yeon Hong Kim

Jae Woo Park

Jun Hyun Park

Toshihiro Kugimiya

Je Hun Lee

Aya Miki

Jung Hwa Kim

Hiroshi Goto

Kyoung Won Lee

Shinya Morita

Sei-yong Park

Ji Hun Lim

Hiroaki Tao

Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.

Thin film transistor and display device

A semiconductor device includes: a substrate, a semiconductor layer including an oxide semiconductor disposed on the substrate, a barrier layer disposed on the semiconductor layer and an insulating layer disposed on the barrier layer. The semiconductor layer includes an oxide semiconductor, and the barrier layer includes a material having a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor. The insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, and the insulating layer includes a portion which contacts with an upper surface of the barrier layer.

Semiconductor device and method for forming the same

Growing community of inventors

Gyeongju-si, South Korea

Jin Hyun Park