Jin Hong An

This inventor holds 21 USPTO granted patents. Top assignees: Hynix Semiconductor Inc., Samsung Sdi Co., Inc.. Active years: 2009-2013.

USPTO Granted Patents = 21

% Patents Active = 33.3

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 37(Granted Patents)

Location History:

Yongin-si, KR (2009 - 2011)
Seoul, KR (2011)
Ulsan, KR (2011)
Yongin, KR (2010 - 2012)
Gyeonggi-do, KR (2010 - 2013)

Company Filing History:

12 out of 6,228

Hynix Semiconductor Inc.

patents

9 out of 7,663

Samsung Sdi Co., Inc.

patents

Years Active: 2009-2013

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21 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8416638 - Semiconductor memory device removing parasitic coupling capacitance between word lines (2013-04-09),

2. 8319642 - Radio frequency identification device having nonvolatile ferroelectric memory (2012-11-27),

3. 8274369 - Radio frequency identification device having nonvolatile ferroelectric memory (2012-09-25),

4. 8189373 - Phase change memory device using a multiple level write voltage (2012-05-29),

5. 8153287 - Air supply system for fuel cell and fuel cell system using the same (2012-04-10),

6. 8142945 - Method for controlling peripheral system and fuel cell system using the same (2012-03-27),

7. 7971606 - Fuel tank and cap device thereof (2011-07-05),

8. 7969794 - One-transistor type DRAM (2011-06-28),

9. 7935448 - Method and apparatus for controlling operation of direct methanol fuel cell system (2011-05-03),

10. 7929339 - Phase change memory device (2011-04-19),

11. 7927758 - Gasket being capable of measuring voltage and fuel cell system having the same (2011-04-19),

12. 7910261 - Cell voltage measurer for fuel cell stack and fuel cell system using the same (2011-03-22),

13. 7864611 - One-transistor type DRAM (2011-01-04),

14. 7846605 - Pump having noise-proof and vibration-proof structure and fuel cell system using the same (2010-12-07),

15. 7759012 - Direct methanol fuel cell system and operating method thereof (2010-07-20),

Title: Jin Hong An: Pioneering Innovations in Semiconductor Technology

Introduction:

In the realm of inventors, few possess the dedication and drive exhibited by Jin Hong An. Hailing from Yongin-si, South Korea, An is a true pioneer whose relentless pursuit of excellence continues to shape the landscape of technology and leave a lasting impact on society.

Latest Patents:

1. "Semiconductor memory device removing parasitic coupling capacitance between word lines": An innovative semiconductor memory device that effectively eliminates parasitic coupling capacitance between word lines, enhancing performance and efficiency.

2. "Radio frequency identification device having nonvolatile ferroelectric memory": A cutting-edge RFID device featuring nonvolatile ferroelectric memory, designed to optimize data processing and storage capabilities.

Career Highlights:

With an impressive portfolio of 21 patents, Jin Hong An has made significant contributions to the field of semiconductor technology. Having worked at renowned companies such as Hynix Semiconductor Inc. and Samsung SDI Co., Inc., An has honed his skills and expertise in developing groundbreaking innovations.

Collaborations:

Throughout his career, Jin Hong An has collaborated with esteemed colleagues such as Hee Bok Kang and Suk Kyoung Hong. Together, they have synergized their talents to push the boundaries of innovation and bring forth impactful technological advancements.

Conclusion:

Jin Hong An stands as a beacon of innovation, inspiring future generations of inventors to push the limits of what is possible in the realm of technology. His dedication, coupled with his ingenious inventions, cements his legacy as a true pioneer in the world of inventors, leaving an indelible mark on the future of innovation.