The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Dec. 23, 2009
Hee Bok Kang, Chungcheongbuk-do, KR;
Jin Hong an, Gyeonggi-do, KR;
Suk Kyoung Hong, Gyeonggi-do, KR;
Hee Bok Kang, Chungcheongbuk-do, KR;
Jin Hong An, Gyeonggi-do, KR;
Suk Kyoung Hong, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A phase change memory device includes a plurality of word lines arranged in a row direction and a plurality of bit lines arranged in a column direction. A plurality of reference bit line and a plurality of clamp bit lines are arranged in the column direction. A cell array block including a phase change resistance cell is arranged where a word line and a bit line intersect. A reference cell array block is formed where a word line and the reference bit line intersect. The reference cell array block is configured to output a reference current. A clamp cell array block is formed where a word line and a clamp bit line intersect. The clamp cell array block is configured to output a clamp current. A sense amplifier is connected to each of the bit lines and is configured to receive a clamp voltage and a reference voltage.