The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2013

Filed:

Jun. 30, 2008
Applicants:

Dong Hwee Kim, Icheon, KR;

Jin Hong an, Gyeonggi-do, KR;

Inventors:

Dong Hwee Kim, Icheon, KR;

Jin Hong An, Gyeonggi-do, KR;

Assignee:

Hynix Semiconductor Inc., Kyoungki-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 8/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device includes a main word line shared by a plurality of mats. Each of the mats includes a plurality of sub word lines. A decoding unit is configured to decode a row address bit and output a word line driving signal. A plurality of sub word line driving units are each configured to activate one of the sub word lines according to the word line driving signal. In the semiconductor memory device each neighboring sub word line driving units is connected to a different main word line to remove parasitic coupling capacitance.


Find Patent Forward Citations

Kim, Dong. (2013). Semiconductor memory device removing parasitic coupling capacitance between word lines (U.S. Patent No. 8416638). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8416638

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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