Yongin, South Korea

Jin-hee Kang

This inventor holds 4 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2019-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin-hee Kang. Retrieved from https://idiyas.com/inventor/jin-hee-kang-5fuixl0d

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2019-2022

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4 patents (USPTO):Explore Patents

Title: Jin-hee Kang and Her Light-Emitting Diode Patents.

Introduction

Jin-hee Kang is an inventor based in Yongin, South Korea. Her patent work includes innovations in light-emitting diode (LED) apparatuses and their manufacturing methods. She is associated with Samsung Electronics Co., Ltd. and is credited with 4 patents.

Latest Patents

Kang’s latest listed patent is titled “Light Emitting Diode Apparatus and Manufacturing Method Thereof.” The disclosed method forms an LED on a substrate and creates a light-leakage-preventing layer around the LED’s side surface. It then etches the substrate beneath the LED and bonds a wavelength-converting material in the etched region. That material includes a semiconductor layer with a quantum well layer. The supplied patent information lists this same title and description twice.

Career Highlights

Kang’s listed patent activity reflects work on LED structures, light control, and wavelength conversion. Her affiliation with Samsung Electronics connects this work to a company active in electronics and semiconductor technologies.

Collaborations

The supplied information names Ji-Hoon Kang and Seong-woo Cho as Kang’s coworkers. It does not specify their roles in the listed patent.

Conclusion

Jin-hee Kang’s patent portfolio includes LED apparatus and manufacturing innovations, with a focus on preventing light leakage and integrating wavelength-converting materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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