The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Oct. 06, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); H01L 33/60 (2010.01); H01L 33/10 (2010.01); H01L 33/62 (2010.01); H01L 33/20 (2010.01); H01L 25/075 (2006.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/502 (2013.01); H01L 25/0756 (2013.01); H01L 33/0093 (2020.05); H01L 33/10 (2013.01); H01L 33/20 (2013.01); H01L 33/46 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract
A manufacturing method of a light emitting diode apparatus is provided. This method includes forming a light emitting diode on the substrate, forming a light leakage preventing layer to surround the side surface of the light emitting diode, etching a region corresponding to the light emitting diode in the substrate, and bonding a wavelength converting material to a lower portion of the light emitting diode in the etched region, in which the wavelength converting material includes a semiconductor layer including a quantum well layer.