Jichun Ye

Title: Jichun Ye: Innovator in Silicon Oxynitride Materials

Introduction

Jichun Ye is a prominent inventor based in Ningbo, China. He has made significant contributions to the field of materials science, particularly in the development of ultrathin silicon oxynitride interface materials. With a total of 6 patents to his name, Ye's work has the potential to impact various applications in semiconductor technology.

Latest Patents

Jichun Ye's latest patents include innovative advancements in ultrathin silicon oxynitride interface materials and tunnel oxide passivated structures. One of his notable inventions is an ultrathin silicon oxynitride interface material, which is an SiON film with a thickness ranging from 1 nm to 4 nm. This material features a nitrogen atom content between 1% and 40%. Compared to traditional silicon oxide, the SiON film significantly reduces the diffusion rate of boron, thereby minimizing its damaging effects and enhancing the integrity of the film. Additionally, the high nitrogen concentration in the SiON film lowers the concentration of boron on the silicon surface, reducing boron-induced defects. Furthermore, the energy band structure of the SiON film is similar to that of silicon nitride, which improves hole transport efficiency and passivation quality.

Another of Ye's patents focuses on a modified tunnel oxide layer and its preparation method, along with a TOPCon structure and solar cell applications. The modified tunnel oxide layer is created from SiO subjected to plasma surface treatment, with a silicon content greater than or equal to 18%. This innovative approach decreases the density of interface states and effectively reduces the damaging effects of boron on the tunnel oxide layer, thereby enhancing the overall performance of the TOPCon structure.

Career Highlights

Jichun Ye is currently employed at Teranergy Technology Co., Ltd., where he continues to push the boundaries of material science. His work is characterized by a commitment to innovation and excellence in the development of advanced materials for semiconductor applications.

Collaborations

Ye collaborates with talented individuals in his field, including Yuheng Zeng and Mingdun Liao. Their combined expertise contributes to the advancement of technology and the successful development of new materials.

Conclusion

Jichun Ye is a distinguished inventor whose work in ultrathin silicon oxynitride materials and