Surface composite film structure with longitudinal transmission cutoff and transverse transmission conduction, and preparation method and application thereof

Abstract

A surface composite film structure with longitudinal transmission cutoff and transverse transmission conduction, and a preparation method and application thereof are provided. The surface composite film structure includes a nano dielectric layer arranged on a surface of a silicon substrate, a silicide layer arranged on the nano dielectric layer and a polycrystalline silicon layer arranged on the silicide layer. A material of the nano dielectric layer is a hydrogenated silicon oxide film, a material of the silicide layer is a hydrogenated carbon nitride silicon film including phosphorus or boron, and a material of the polycrystalline silicon layer is a phosphorus-doped or boron-doped polycrystalline silicon film. The surface composite film structure can achieve an excellent passivation effect and has the characteristics of longitudinal non-conduction and transverse conduction, and the transverse sheet resistance is flexibly adjustable, meeting the performance requirements of new silicon-based semiconductor physical devices.