Modified tunnel oxide layer and preparation method, topcon structure and preparation method, and solar cell

Abstract

A modified tunnel oxide layer and a preparation method, a TOPCon structure and a preparation method, and a solar cell are provided. The modified tunnel oxide layer is SiOsubjected to plasma surface treatment, and a Sicontent in the SiOis greater than or equal to above 18%. The density of the interface state subjected to plasma surface treatment decreases, and compared with the silicon oxide layer prepared in the prior arts, boron has a low diffusion rate in the modified silicon oxide layer and hence the damaging effect of the boron on the tunnel oxide layer is reduced effectively, thereby improving the integrity of the silicon oxide layer and maintaining chemical passivation effect. The modified tunnel oxide layer significantly increases the performance indexes of the TOPCon structure.