Baojie Yan

Title: Innovations of Baojie Yan in Silicon Oxynitride Materials

Introduction

Baojie Yan is a prominent inventor based in Ningbo, China. He has made significant contributions to the field of materials science, particularly in the development of ultrathin silicon oxynitride interface materials. With a total of 2 patents, his work focuses on enhancing the performance and integrity of silicon-based structures.

Latest Patents

Yan's latest patents include the development of an ultrathin silicon oxynitride interface material and a tunnel oxide passivated structure. The ultrathin silicon oxynitride interface material is characterized by an SiON film with a thickness ranging from 1 nm to 4 nm, containing nitrogen atoms in a percentage from 1% to 40%. This innovative material significantly reduces the diffusion rate of boron, thereby minimizing its damaging effects and improving the overall integrity of the SiON film. Additionally, the high nitrogen concentration in the SiON film lowers the concentration of boron on the silicon surface, which helps to reduce boron-induced defects.

Furthermore, Yan's patent on the modified tunnel oxide layer and its preparation method enhances the performance of TOPCon structures and solar cells. The modified tunnel oxide layer, subjected to plasma surface treatment, features a silicon content greater than or equal to 18%. This treatment effectively decreases the density of interface states and reduces the damaging effects of boron, thereby improving the integrity and chemical passivation of the silicon oxide layer.

Career Highlights

Baojie Yan is currently associated with Teranergy Technology Co., Ltd., where he continues to innovate in the field of silicon materials. His work has garnered attention for its potential applications in solar energy technologies and semiconductor devices.

Collaborations

Yan collaborates with notable colleagues, including Yuheng Zeng and Haiyang Xing, who contribute to his research and development efforts.

Conclusion

Baojie Yan's contributions to the field of silicon oxynitride materials demonstrate his commitment to advancing technology in materials science. His innovative patents are paving the way for improved performance in semiconductor and solar technologies.