Ningbo, China

Haiyang Xing

This inventor holds 2 USPTO granted patents. Top assignee: Teranergy Technology Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Haiyang Xing. Retrieved from https://idiyas.com/inventor/haiyang-xing

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.9

ph-index = 1


Company Filing History:


Years Active: 2025

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2 patents (USPTO):Explore Patents

Title: Innovations of Haiyang Xing in Silicon Oxynitride Materials

Introduction

Haiyang Xing is a notable inventor based in Ningbo, China. He has made significant contributions to the field of materials science, particularly in the development of ultrathin silicon oxynitride interface materials. With a total of 2 patents to his name, his work has implications for improving the performance of semiconductor devices.

Latest Patents

Haiyang Xing's latest patents include the development of an ultrathin silicon oxynitride interface material and a modified tunnel oxide layer. The ultrathin silicon oxynitride interface material is characterized by an SiON film with a thickness ranging from 1 nm to 4 nm, containing nitrogen atoms in a percentage from 1% to 40%. This innovation effectively reduces the damaging effects of boron diffusion, enhancing the integrity of the SiON film and maintaining its chemical passivation effect.

Additionally, his work on the modified tunnel oxide layer involves a silicon oxide subjected to plasma surface treatment, which significantly improves the performance of TOPCon structures. The modified layer reduces the diffusion rate of boron, thereby enhancing the overall integrity and performance of silicon oxide layers in solar cells.

Career Highlights

Haiyang Xing is currently employed at Teranergy Technology Co., Ltd., where he continues to push the boundaries of material science. His research focuses on enhancing the efficiency and effectiveness of semiconductor materials, which are crucial for various technological applications.

Collaborations

Throughout his career, Haiyang Xing has collaborated with notable colleagues such as Baojie Yan and Yuheng Zeng. These collaborations have fostered a productive environment for innovation and development in their respective fields.

Conclusion

Haiyang Xing's contributions to the field of silicon oxynitride materials demonstrate his commitment to advancing technology in semiconductor applications. His innovative patents and ongoing research continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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