Laminated dopant source structure, relevant high-quality emitter and preparation method thereof

Abstract

A laminated dopant source structure, a relevant high-quality emitter and a preparation method thereof are provided. The laminated dopant source structure includes a nano silicon oxide layer, a doped silicon oxide layer and a dopant source layer laminated on a front surface of a crystalline silicon substrate; the doped silicon oxide layer is doped with boron or phosphorus atoms; the material of the dopant source layer is selected from one of boron/phosphorus-doped amorphous silicon, carbon-doped boron/phosphorus-doped amorphous silicon, nitrogen-doped boron/phosphorus-doped amorphous silicon and carbon-nitrogen-doped boron/phosphorus-doped amorphous silicon. The nano silicon oxide, the doped silicon oxide and the boron/phosphorus-doped amorphous silicon form the front surface dopant source. The dopant source structure combines strong laser absorption ability and high boron/phosphorus concentration, which helps reduce the laser power and irradiation time required for laser SE technology. Further, without loss of sheet resistance and junction depth, the surface recombination can be diminished.