Xian Zhang

Title: Xian Zhang - Innovator in Semiconductor Technology

Introduction

Xian Zhang is a prominent inventor based in Ningbo, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to dopant source structures.

Latest Patents

Xian Zhang holds a patent for a "Laminated dopant source structure, relevant high-quality emitter and preparation method thereof." This invention provides a laminated dopant source structure that includes a nano silicon oxide layer, a doped silicon oxide layer, and a dopant source layer laminated on the front surface of a crystalline silicon substrate. The doped silicon oxide layer is doped with boron or phosphorus atoms. The material of the dopant source layer is selected from various options, including boron/phosphorus-doped amorphous silicon and carbon-doped boron/phosphorus-doped amorphous silicon. This innovative structure combines strong laser absorption ability with high boron/phosphorus concentration, which helps reduce the laser power and irradiation time required for laser SE technology. Furthermore, it diminishes surface recombination without loss of sheet resistance and junction depth.

Career Highlights

Xian Zhang is affiliated with the Chinese Academy of Sciences, where he continues to advance research in semiconductor technologies. His work has garnered attention for its potential applications in improving the efficiency of semiconductor devices.

Collaborations

Xian Zhang has collaborated with notable colleagues, including Jichun Ye and Haojiang Du, contributing to various research projects and innovations in the field.

Conclusion

Xian Zhang's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of high-quality emitters and dopant source structures.