Jiann-Ruey Chen

Title: The Innovations of Jiann-Ruey Chen

Introduction

Jiann-Ruey Chen is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of electronics, particularly in the development of advanced memory devices. With a total of five patents to his name, Chen's work has garnered attention for its innovative approaches and practical applications.

Latest Patents

Among his latest patents is a method of fabricating an infrared optical bulk channel field effect transistor. Additionally, he has developed structures for a low-voltage-operative non-volatile ferroelectric memory. This memory device utilizes a lead titanate (PbTiO.sub.3) thin film deposited on a n/P.sup.+ Si substrate by rf magnetron sputtering as the gate oxide, with platinum embedded in the gate oxide as the floating gate. The device features a rapid bulk channel structure that enhances mobility, offering several advantages: low write/erase voltage (≤10 V), fast access time (<160 ns), and ease of fabrication for VLSI memory devices.

Career Highlights

Jiann-Ruey Chen has worked with the National Science Council, where he has contributed to various research initiatives. His expertise in memory technology has positioned him as a key figure in the advancement of electronic devices.

Collaborations

Throughout his career, Chen has collaborated with notable colleagues, including Fu-Yuan Chen and Yean-Kuen Fang. Their combined efforts have led to significant advancements in the field of ferroelectric memory technology.

Conclusion

Jiann-Ruey Chen's innovative work in the development of advanced memory devices showcases his expertise and commitment to technological advancement. His contributions continue to influence the electronics industry and pave the way for future innovations.