The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2000
Filed:
Nov. 06, 1997
Applicant:
Inventors:
Assignee:
National Science Council, Taipei, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365145 ; 36518526 ;
Abstract
A non-volatile ferroelectric memory device has been developed, in which the lead titanate (PbTiO.sub.3) thin film is deposited on a n/P.sup.+ Si substrate by rf magnetron sputtering as the gate oxide and Pt is embedded in the gate oxide as the floating gate. Additionally, associated with the rapid bulk channel structure with higher mobility, the developed memory device has the following features: (1) low write/erase voltage (.ltoreq.10 V); (2) fast access time (<160 ns); (3) easy to fabricate on VLSI memory device.