Fu-Yuan Chen

Title: The Innovations of Fu-Yuan Chen

Introduction

Fu-Yuan Chen is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of electronics, particularly in the development of advanced memory devices. With a total of six patents to his name, Chen's work has had a considerable impact on the industry.

Latest Patents

Among his latest patents is a method of fabricating an infrared optical bulk channel field effect transistor. Additionally, he has developed structures for a low-voltage-operative non-volatile ferroelectric memory. This innovative memory device utilizes a lead titanate (PbTiO.sub.3) thin film deposited on a n/P.sup.+ Si substrate by rf magnetron sputtering as the gate oxide, with platinum embedded in the gate oxide as the floating gate. The device features a rapid bulk channel structure that enhances mobility, offering several advantages: low write/erase voltage (≤10 V), fast access time (<160 ns), and ease of fabrication for VLSI memory devices.

Career Highlights

Fu-Yuan Chen has worked with the National Science Council, contributing to various research initiatives. His expertise in memory technology has positioned him as a key figure in the advancement of electronic devices.

Collaborations

Chen has collaborated with notable colleagues, including Jiann-Ruey Chen and Yean-Kuen Fang, further enhancing the scope and impact of his research.

Conclusion

Fu-Yuan Chen's innovative work in the field of electronics, particularly in memory technology, showcases his significant contributions to the industry. His patents reflect a commitment to advancing technology and improving device performance.