The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 1996

Filed:

May. 23, 1995
Applicant:
Inventors:

Yen-Kun Fang, Tainan, TW;

Fu-Yuan Chen, Tainan, TW;

Jiann-Ruey Chen, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
2503382 ; 20419218 ; 427554 ;
Abstract

The present invention is related to an infrared ray sensor including a substrate having a p-n junction, a ferroelectric film formed on a surface of the substrate for sensing infrared ray, and a metal film formed on the ferroelectric film for serving as an infrared-ray receiving electrode. The present invention is also related to a method for producing the IR sensor including steps of: providing the substrate having the p-n junction; depositing the ferroelectric film on the surface of the substrate in a radio frequency (RF) sputtering system; and depositing the metal film on the ferroelectric film by vapor evaporation. Alternatively, the deposition of the ferroelectric film on the surface of the substrate can be performed in a KrF pulse-mode laser evaporation system.


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