The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1998
Filed:
Dec. 10, 1996
Applicant:
Inventors:
Assignee:
National Science Council, Taipei, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257295 ; 257462 ; 257294 ; 438 57 ; 438 69 ; 438-3 ;
Abstract
An infrared optical field effect transistor has been developed using a thin film of Lead Titanate (PbTiO.sub.3) deposited on a n/p.sup.+ Si substrate by RF magnetron sputtering. This transistor possesses excellent pyroelectric properties and can, therefore, be operated even at room temperature. The infrared optical field effect transistor has the following features associated with rapid bulk channel structure and higher mobility: