National Science Council

Other

Fu-Yuan Chen

Jiann-Ruey Chen

Yean-Kuen Fang

Yen-Kun Fang

Bao-Chsun Fang

Method of fabricating an infrared optical bulk channel field effect transistor

A non-volatile ferroelectric memory device has been developed, in which the lead titanate (PbTiO.sub.3) thin film is deposited on a n/P.sup.+ Si substrate by rf magnetron sputtering as the gate oxide and Pt is embedded in the gate oxide as the floating gate. Additionally, associated with the rapid bulk channel structure with higher mobility, the developed memory device has the following features: (1) low write/erase voltage (.ltoreq.10 V); (2) fast access time (&lt;160 ns); (3) easy to fabricate on VLSI memory device.

Structures of a low-voltage-operative non-volatile ferroelectric memory

A workbench for woodworking is composed of a foldable support frame for supporting the workbench on the floor of a work shop, a bench top supported on the support frame and composed of one fixed top plate and one movable top plate, a locating and holding set mounted on the bench top for holding and locating a work piece in accordance with the shape of the work piece, and a cutting set consisting of a locating seat, a rotary seat, a fastening bolt, a spring, and a hand saw capable of being actuated to swivel for an angle corresponding to a swiveling angle of the rotary seat which is caused to swivel along with the locating seat.

Multifunctional workbench for woodworking

An infrared optical field effect transistor has been developed using a thin film of Lead Titanate (PbTiO.sub.3) deposited on a n/p.sup.+ Si substrate by RF magnetron sputtering. This transistor possesses excellent pyroelectric properties and can, therefore, be operated even at room temperature. The infrared optical field effect transistor has the following features associated with rapid bulk channel structure and higher mobility:

Infrared optical bulk channel field effect transistor for greater

The present invention is related to an infrared ray sensor including a substrate having a p-n junction, a ferroelectric film formed on a surface of the substrate for sensing infrared ray, and a metal film formed on the ferroelectric film for serving as an infrared-ray receiving electrode. The present invention is also related to a method for producing the IR sensor including steps of: providing the substrate having the p-n junction; depositing the ferroelectric film on the surface of the substrate in a radio frequency (RF) sputtering system; and depositing the metal film on the ferroelectric film by vapor evaporation. Alternatively, the deposition of the ferroelectric film on the surface of the substrate can be performed in a KrF pulse-mode laser evaporation system.

Infrared ray sensor and its producing method

A gas sensor having a large operation current and being operated at a relatively low temperature includes a substrate having a first surface and a second surface. A sensing area is provided on the first surface for increasing the conductivity across it when the sensing area detects a certain gas. A controlling area is provided on the first surface and beside the sensing area for permitting a tunneling current to pass therethrough when the sensing area cannot sense a certain gas or when the gas sensor is adapted to be sufficiently supplied with power. This control area prevents the tunneling current from being generated when the sensing area detects certain gas and thus the conductivity is increased, so that when the first and the second surfaces are electrically connected to the power supply. The gas sensor will be in an on state when the gas sensor cannot sense there is the certain gas and be in an off state when the gas sensor detects the presence of certain gas. This gas sensor can avoid a dangerous explosion resulting from a flammable gas at a relatively high temperature. The gas sensor possesses a relatively short response time.

Growing community of inventors

Tainan, Taiwan

Fu-Yuan Chen