Ji Shiliang

Title: Ji Shiliang: Innovator in Semiconductor Technology

Introduction

Ji Shiliang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to improving electrical performance in semiconductor structures.

Latest Patents

Ji Shiliang's latest patents include a semiconductor structure and a forming method thereof. This invention provides a method that involves creating a substrate with adjacent first and second regions. Stack structures are formed on these regions, leading to the creation of a first opening. The method further includes forming dielectric layers and a source/drain doped layer, ultimately resulting in a contact plug that enhances electrical performance by reducing contact resistance. Another notable patent focuses on a semiconductor structure that allows for increased pattern density on a substrate. This method addresses the requirement for different pitches of target patterns, ensuring efficient semiconductor design.

Career Highlights

Throughout his career, Ji Shiliang has worked with leading companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International Corporation and Semiconductor Manufacturing (Beijing) International Corporation. His work in these organizations has contributed to advancements in semiconductor manufacturing processes.

Collaborations

Ji has collaborated with notable colleagues such as Zhang Haiyang and Xiao Xingyu. Their combined expertise has fostered innovation in semiconductor technologies.

Conclusion

Ji Shiliang stands out as a key figure in semiconductor innovation, with his patents reflecting a commitment to enhancing technology in this critical field. His contributions continue to influence the future of semiconductor design and manufacturing.