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For the Inventor, By the Inventor

Fremont, CA, United States of America

Jerome S Hubacek

USPTO Granted Patents = 13 

 

Average Co-Inventor Count = 2.6

ph-index = 9

Forward Citations = 742(Granted Patents)


Company Filing History:

goldMedal13 out of 3,768 
 
Lam Research Corporation
 patents

Years Active: 2000-2025

where 'Filed Patents' based on already Granted Patents

13 patents (USPTO):
1. 12278125 - Integrated dry processes for patterning radiation photoresist patterning (2025-04-14),
2. 12183604 - Integrated dry processes for patterning radiation photoresist patterning (2024-12-31),
3. 8845855 - Electrode for plasma processes and method for manufacture and use thereof (2014-09-30),
4. 7517803 - Silicon parts having reduced metallic impurity concentration for plasma reaction chambers (2009-04-14),
5. 7442114 - Methods for silicon electrode assembly etch rate and etch uniformity recovery (2008-10-28),
6. 6846726 - Silicon parts having reduced metallic impurity concentration for plasma reaction chambers (2005-01-25),
7. 6475336 - Electrostatically clamped edge ring for plasma processing (2002-11-05),
8. 6451157 - Gas distribution apparatus for semiconductor processing (2002-09-17),
9. 6408786 - Semiconductor processing equipment having tiled ceramic liner (2002-06-25),
10. 6376385 - Method of manufacturing assembly for plasma reaction chamber and use thereof (2002-04-23),
11. 6194322 - Electrode for plasma processes and method for a manufacture and use thereof (2001-02-27),
12. 6148765 - Electrode for plasma processes and method for manufacture and use thereof (2000-11-21),
13. 6073577 - Electrode for plasma processes and method for manufacture and use thereof (2000-06-13),

Title: Innovations of Jerome S Hubacek

Introduction

Jerome S Hubacek is a prominent inventor based in Fremont, CA (US), known for his significant contributions to the field of semiconductor technology. With a total of 13 patents to his name, he has made remarkable advancements in the methods used for patterning thin films on semiconductor substrates.

Latest Patents

His latest patents focus on integrated dry processes for patterning radiation photoresist. These methods involve depositing an organometallic polymer-like material onto the surface of semiconductor substrates. The process includes exposing the surface to extreme ultraviolet (EUV) light to form a pattern, followed by developing the pattern for transfer to underlying layers. The depositing operations can be performed using techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD), including variations that separate metal precursors and counter-reactants in time or space.

Career Highlights

Jerome S Hubacek has built a successful career at Lam Research Corporation, where he has been instrumental in advancing semiconductor manufacturing technologies. His innovative approaches have not only enhanced the efficiency of production processes but have also contributed to the overall progress in the semiconductor industry.

Collaborations

Throughout his career, Hubacek has collaborated with notable colleagues, including William S Kennedy and John Lilleland. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and the development of cutting

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