Lam Research Corporation

Jerome S Hubacek

William S Kennedy

John Lilleland

Daxing Ren

Sivananda K Kanakasabapathy

Adrien Lavoie

Qinghuang Lin

Richard Stephan Wise

Richard Alan Gottscho

Yang Pan

Jengyi Yu

Samantha S H Tan

Timothy William Weidman

Nicholas Edward Webb

Mohammed Haroon Alvi

Hong Shih

Chun Yan

Albert R Ellingboe

Robert A Maraschin

Tuochuan Huang

Enrico Magni

Catherine Zhou

David Benzing

Bi Ming Yen

Dae J Lim

Dougyong Sung

Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Integrated dry processes for patterning radiation photoresist patterning

A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.

Electrode for plasma processes and method for manufacture and use thereof

Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.

Silicon parts having reduced metallic impurity concentration for plasma reaction chambers

Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.

Methods for silicon electrode assembly etch rate and etch uniformity recovery

An edge ring clamping assembly wherein an edge ring is supported by an electrostatic edge ring chuck and a method of improving the temperature control of an edge ring in a plasma processing chamber. The edge ring can be made of a conductive material such as silicon or silicon carbide and temperature control of the edge ring can be enhanced by supplying heat transfer gas such as helium between opposed surfaces of the edge ring and the edge ring chuck.

Electrostatically clamped edge ring for plasma processing

A baffle plate of a showerhead gas distribution system and method of using the baffle plate wherein the baffle plate is effective for reducing particle and/or metal contamination during processing of semiconductor substrates such as silicon wafers. The showerhead can be a showerhead electrode of a plasma processing chamber such as an etch reactor. The baffle plate comprises silicon on at least one surface thereof and is adapted to fit in a baffle chamber of the gas distribution system such that the silicon containing surface is adjacent to and faces the showerhead. The silicon containing baffle plate can consist entirely of silicon or silicon carbide of at least 99.999% purity. The silicon can be single crystal silicon or polycrystalline and the silicon carbide can be CVD silicon carbide, sintered silicon carbide, non-sintered silicon carbide or combination thereof. The non-sintered silicon carbide can be silicon carbide formed by reaction synthesis of silicon vapor with a carbon material such as graphite. Openings in the silicon containing baffle plate can be offset from openings in the showerhead to avoid a line-of-sight between plasma in the chamber and the openings in the silicon containing baffle plate.

Gas distribution apparatus for semiconductor processing

A plasma processing chamber including a ceramic liner in the form of ceramic tiles mounted on a resilient support member. The liner and other parts such as a gas distribution plate and a plasma screen can be made of SiC which advantageously confines the plasma and provides temperature control of the inner surfaces of the chamber. The liner can be heated by a heater which provides heat to the liner by thermal conduction. To remove excess heat from the liner, the resilient support can be an aluminum support frame which conducts heat from the liner to a temperature controlled member such as a top plate of the chamber. The support frame can include a continuous upper portion and a segmented lower portion which allows thermal stresses to be accommodated during processing of semiconductor substrates in the plasma chamber.

Semiconductor processing equipment having tiled ceramic liner

An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circular disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.

Method of manufacturing assembly for plasma reaction chamber and use thereof

Electrode for plasma processes and method for a manufacture and use thereof

An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circuit disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.

Growing community of inventors

Fremont, CA, United States of America

Jerome S Hubacek