The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Mar. 15, 2023
Lam Research Corporation, Fremont, CA (US);
Jengyi Yu, San Ramon, CA (US);
Samantha S. H. Tan, Newark, CA (US);
Mohammed Haroon Alvi, San Jose, CA (US);
Richard Wise, Los Gatos, CA (US);
Yang Pan, Los Altos, CA (US);
Richard Alan Gottscho, Menlo Park, CA (US);
Adrien LaVoie, Newberg, OR (US);
Sivananda Krishnan Kanakasabapathy, Pleasanton, CA (US);
Timothy William Weidman, Sunnyvale, CA (US);
Qinghuang Lin, Yorktown Heights, NY (US);
Jerome S. Hubacek, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.