Jeong Hyun Yoo

Title: Jeong Hyun Yoo and Semiconductor Process Innovation.

Introduction

Jeong Hyun Yoo is an inventor based in Gyeonggi-do, South Korea, whose patent work focuses on semiconductor manufacturing processes. His disclosed inventions address plasma-based mask passivation and the removal of residual polymers during etching. He is associated with Applied Materials, Inc. and has 3 patents.

Latest Patents

“Mask Passivation Using Plasma” describes supplying a hydrogen-containing gas to a plasma source and generating hydrogen plasma particles. These particles are used to deposit a passivation layer on a first mask layer positioned over a second mask layer and a substrate.

“Methods of Removing Residual Polymers Formed During a Boron-Doped Amorphous Carbon Layer Etch Process” concerns removing polymers that form near the bottom of a feature during etching. The method uses a first plasma to etch the boron-doped amorphous carbon layer through a patterned mask, followed by a second plasma to remove the residual polymers. The described second process gas includes nitrogen, oxygen, hydrogen, and methane.

Career Highlights

Yoo’s patent portfolio reflects work on plasma processing and materials used in semiconductor fabrication. The inventions address process steps that can help manage mask layers and clear etch-related residues.

Collaborations

Yoo’s listed coworkers include Byungkook Kong and Hoon Sang Lee. His company affiliation is Applied Materials, Inc.

Conclusion

Jeong Hyun Yoo’s disclosed patents highlight practical approaches to mask passivation and polymer removal in semiconductor etching, reflecting his contributions to fabrication-process innovation.