Applied Materials, Inc.

Jeong Hyun Yoo

Byungkook Kong

Hoon Sang Lee

Hun Sang Kim

Hung Sang Kim

Jun-Wan Kim

Jun Wan Kim

Wonmo Ahn

A gas comprising hydrogen is supplied to a plasma source. Plasma comprising hydrogen plasma particles is generated from the gas. A passivation layer is deposited on a first mask layer on a second mask layer over a substrate using the hydrogen plasma particles.

Mask passivation using plasma

Methods for removing residual polymers formed during etching of a boron-doped amorphous carbon layer are provided herein. In some embodiments, a method of etching a feature in a substrate includes: exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and exposing the residual polymers to a second plasma through the patterned mask layer to etch the residual polymers proximate the bottom of the feature, wherein the second plasma is formed from a second process gas comprising nitrogen (N), oxygen (O), hydrogen (H), and methane (CH).

Methods of removing residual polymers formed during a boron-doped amorphous carbon layer etch process

In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CHinto a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask layer includes CH, Cl, SFand O.

Method of etching a boron doped carbon hardmask

Growing community of inventors

Gyeonggi-do, South Korea

Jeong Hyun Yoo