Jeong Hwan Han

Title: Jeong Hwan Han: Innovator in Metal Oxide Technology

Introduction

Jeong Hwan Han is a prominent inventor based in Daejeon, South Korea. He has made significant contributions to the field of chemical technology, particularly in the development of metal oxide materials. With a total of 2 patents to his name, Han is recognized for his innovative approaches to enhancing material properties and device functionalities.

Latest Patents

One of Han's latest patents is focused on a metal precursor for making metal oxide. This novel metal precursor exhibits improved thermal stability and volatility. The patent also details a method for manufacturing high-quality metal oxide thin films at an excellent growth rate and low temperature using this precursor. Another significant patent involves a variable resistance memory device and its operating method. This invention includes a method for programming multi-bit data in a variable resistance memory cell, utilizing sequentially increased program voltage pulses. The current-voltage curve of the memory cell demonstrates a self-compliance characteristic, enhancing the device's performance.

Career Highlights

Jeong Hwan Han is affiliated with the Korea Research Institute of Chemical Technology, where he continues to push the boundaries of material science. His work has implications for various applications, including electronics and memory storage technologies.

Collaborations

Han collaborates with notable colleagues such as Bo Keun Park and Gun Hwan Kim, contributing to a dynamic research environment that fosters innovation.

Conclusion

Jeong Hwan Han's contributions to metal oxide technology and memory devices highlight his role as a leading inventor in the field. His patents reflect a commitment to advancing material science and improving device performance.