Korea Research Institute of Chemical Technology

Jeong Hwan Han

Bo Keun Park

Young Ki Lee

Dong Ju Jeon

Taek-Mo Chung

Chang Gyoun Kim

Gun Hwan Kim

Eun Ae Jung

Taek Mo Chung

Ji Hyeun Nam

Ji Woon Choi

A novel metal precursor having improved thermal stability and volatility is provided. Also provided herein are: a method for readily manufacturing a good quality metal oxide thin film at an excellent growth rate at low temperature by using the metal precursor; and a thin film manufactured by using the same.

Metal precursor for making metal oxide

There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic.

Variable resistance memory device and operating method thereof

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Daejeon, South Korea

Jeong Hwan Han