The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
May. 01, 2018
Korea Research Institute of Chemical Technology, Daejeon, KR;
Gun Hwan Kim, Daejeon, KR;
Young Kuk Lee, Daejeon, KR;
Taek Mo Chung, Daejeon, KR;
Bo Keun Park, Daejeon, KR;
Jeong Hwan Han, Daejeon, KR;
Ji Woon Choi, Gunpo-si, KR;
KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY, Daejeon, KR;
Abstract
There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic.