IDiyas

For the Inventor, By the Inventor

Grafrath, Germany

Jens-Peer Stengl

USPTO Granted Patents = 15


Average Co-Inventor Count = 3.2

ph-index = 6

Forward Citations = 200(Granted Patents)


Location History:

  • Munich, DE (1984)
  • Grafrath, DE (1998 - 2016)

Company Filing History:

goldMedal6 out of 14,705 
 
Infineon Technologies Ag
 patents
silverMedal6 out of 2,093 
 
Infineon Technologies Austria Ag
 patents
bronzeMedal3 out of 30,028 
 
Siemens Aktiengesellschaft
 patents

Years Active: 1984-2016

where 'Filed Patents' based on already Granted Patents

15 patents (USPTO):
1. 9431379 - Signal transmission arrangement (2016-08-30),
2. 8970000 - Signal transmission arrangement (2015-03-03),
3. 8790985 - High voltage resistance coupling structure (2014-07-29),
4. 8319573 - Signal transmission arrangement (2012-11-27),
5. 8278730 - High voltage resistance coupling structure (2012-10-02),
6. 7710215 - Semiconductor configuration having an integrated coupler and method for manufacturing such a semiconductor configuration (2010-05-04),
7. 6870201 - High voltage resistant edge structure for semiconductor components (2005-03-22),
8. 6831327 - Vertically structured power semiconductor component (2004-12-14),
9. 6812524 - Field effect controlled semiconductor component (2004-11-02),
10. 6465863 - Power diode structure (2002-10-15),
11. 6309974 - Method for eliminating residual oxygen impurities from silicon wafers pulled from a crucible (2001-10-30),
12. 6271562 - Semiconductor component which can be controlled by a field effect (2001-08-07),
13. 6037631 - Semiconductor component with a high-voltage endurance edge structure (2000-03-14),
14. 5726478 - Integrated power semiconductor component having a substrate with a (1998-03-10),
15. 4459498 - Switch with series-connected MOS-FETs (1984-07-10),
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