The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Mar. 01, 1999
Gerald Deboy, Unterhaching, DE;
Jens-Peer Stengl, Grafrath, DE;
Jenoe Tihanyi, Kirchheim, DE;
Heimo Graf, Paternion, AT;
Infineon Technologies AG, Munich, DE;
Abstract
A power semiconductor component that can be controlled by a field effect has a multiplicity of parallel-connected individual components disposed in cells, the cells are disposed tightly packed on a relatively small space in a cell array. Parallel-connected source zones of the cells have shadowed regions that in each case reduce an effective W/L channel ratio in the cells containing the shadowed regions. The invention has the advantage that because of the provision of the shadowed regions inside the source zones that are preferably undoped or at least doped much weaker than the source zones, the critical regions in the cell array with the highest current density are specifically moderated. Thus the current density in the current-carrying filament of the cell is more homogeneously distributed. This measure renders it possible to reduce the cell grid spacing of the cells in the cell array, or to reduce the forward resistance per unit area, and this leads simultaneously to a reduction in the power loss.