The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Nov. 02, 1998
Gerald Deboy, Unterhaching, DE;
Jenoe Tihanyi, Kirchheim, DE;
Helmut Strack, Munich, DE;
Helmut Gassel, Munich, DE;
Jens-peer Stengl, Grafrath, DE;
Hans Weber, Ainring, CH;
Gerald Deboy, Unterhaching, DE;
Jenoe Tihanyi, Kirchheim, DE;
Helmut Strack, Munich, DE;
Helmut Gassel, Munich, DE;
Jens-Peer Stengl, Grafrath, DE;
Hans Weber, Ainring, CH;
Infineon Technologies AG, Münich, DE;
Abstract
The invention relates to a high voltage resistant edge structure in the edge region of a semiconductor component which has floating guard rings of the first conductivity type and inter-ring zones of the second conductivity type which are arranged between the floating guard rings, wherein the conductivities and/or the inter-ring zones are set such that their charge carriers are totally depleted when blocking voltage is applied. The inventive edge structure achieves a modulation of the electrical field both at the surface and in the volume of the semiconductor body. If the inventive edge structure is suitably dimensioned, the field intensity maximum can easily be situated in the depth; that is, in the region of the vertical p-n junction. Thus, a suitable edge construction which permits a 'soft' leakage of the electrical field in the volume can always be provided over a wide range of concentrations of p and n doping.