Boise, ID, United States of America

Jennifer K Sigman

USPTO Granted Patents = 4 

Average Co-Inventor Count = 4.1

ph-index = 3

Forward Citations = 32(Granted Patents)


Company Filing History:


Years Active: 2013-2017

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4 patents (USPTO):Explore Patents

Title: Jennifer K Sigman: Innovator in Semiconductor Technology

Introduction

Jennifer K Sigman is a prominent inventor based in Boise, ID (US). She has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. Her work focuses on developing advanced materials and methods that enhance semiconductor structures.

Latest Patents

Among her latest patents is "Interfacial materials for use in semiconductor structures and related methods." This patent describes a method of forming a semiconductor structure that includes creating a high-k dielectric material, a continuous interfacial material over the dielectric, and a conductive material above the interfacial layer. Additionally, she has patented methods for forming insulative elements, which involve using different metal oxide materials and crystallization techniques to improve dielectric properties.

Career Highlights

Jennifer has worked with notable companies such as Micron Technology Incorporated and Sandia Corporation. Her experience in these organizations has allowed her to develop and refine her innovative ideas in semiconductor technology.

Collaborations

Throughout her career, Jennifer has collaborated with esteemed colleagues, including Vassil N Antonov and Vishwanath Bhat. These partnerships have contributed to her success and the advancement of her research.

Conclusion

Jennifer K Sigman is a trailblazer in semiconductor innovation, with a strong portfolio of patents that reflect her expertise and dedication to the field. Her contributions continue to shape the future of semiconductor technology.

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