The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Jan. 12, 2012
Chun I Hsieh, Taoyuan, TW;
Vishwanath Bhat, Boise, ID (US);
Jennifer Sigman, Boise, ID (US);
Vassil Antonov, Boise, ID (US);
Wei Hui Hsu, Zhongli, TW;
Chun I Hsieh, Taoyuan, TW;
Vishwanath Bhat, Boise, ID (US);
Jennifer Sigman, Boise, ID (US);
Vassil Antonov, Boise, ID (US);
Wei Hui Hsu, Zhongli, TW;
Nanya Technology Corporation, Tao-Yuan Hsien, TW;
Abstract
A method for forming a stacking structure, including forming a ruthenium oxide layer over a substrate; forming a praseodymium oxide layer over the ruthenium oxide layer; and forming a titanium oxide layer over the praseodymium oxide layer; wherein the titanium oxide layer has a rutile phase with the existence of the praseodymium oxide layer underneath. The oxide layers are deposited by a plurality of atomic layer deposition cycles using ruthenium precursor, praseodymium precursor, titanium precursor, and ozone.